L. Shen, Y. Jiao, W. Yao, Z. Cao, J. van der Tol, G. Roelkens, and M. Smit
Conference on Lasers and Electro-Optics (CLEO), 5 – 10 June 2016, San Jose, California, USA.
Publication year: 2016

Abstract

An InP membrane-based uni-traveiling carrier photodetector, heterogeneously integrated on silicon, is realized using double-sided processing. A responsivity of 0.7 A/W at 1.55 μm and a 3 dB bandwidth beyond 67 GHz are demonstrated.

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