L. Shen, Y. Jiao, L.M. Augustin, K. Sander, J.J.G.M. van der Tol, H.P.M.M. Ambrosius, G.C. Roelkens, and M.K. Smit
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), 11-15 May 2014, Montpellier, France.
Publication year: 2014

Abstract:

Au spiking is a long-standing problem for Ni/Ge/Au ohmic contacts on n-InP. This becomes more critical when the contacts are deposited on top of thin membrane devices. In order to reduce the spiking while maintaining a low resistance, we present a new approach which reduces the amount of Au in these contacts. A low specific contact resistance of 7×10-7 Ωcm2 is obtained after a 15 s annealing at 400 °C. Afterwards the contacts can be thickened with an extra deposition of metals. Scanning electron microscope pictures show abrupt and uniform interfaces between metals and semiconductors.

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