J. P. van Engelen, L. Shen, G. Roelkens, Y. Jiao, M. K. Smit and J. J. G. M. van der Tol
IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 1, pp. 3300108, 2018.
Publication year: 2018


We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electronconcentration dependent absorption of highly-doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 5.4 dB, a modulation speed above 50 Gbit/s and a power consumption of 53 fJ/bit. The modulator has a small footprint of 0.4 × 80 um2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

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