Y. Jiao, P.J. van Veldhoven, E. Smalbrugge, M.K. Smit and E.A.J.M. Bente
17th Annual Symposium of the IEEE Photonics Benelux Chapter, Université de Mons, 29-30 Nov 2012, Mons, Belgium.
Publication year: 2012


In this contribution we present the small signal net modal gain measurement results of single-layer InAs/InP(100) quantum dot amplifiers in 1.6 to 1.8 μm wavelength range. The material shows sufficient optical gain to be used in the long-wavelength optical coherence tomography. The modal gain has been observed as a function of current density and temperature. An improved rate equation model has been applied to analyse the measurements. A good fit of the theory to the measurements was obtained with a temperature dependent carrier injection efficiency which is below 2%.

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