In this paper a study of waveguide photodetectors based on InAs/InP(100) quantum dot (QD) active material are presented for the first time. These detectors are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. We investigated dark current, responsivity as well as spectral response and bandwidth of the detectors. It is demonstrated that the devices meet the requirements for swept-source optical coherent tomography (SS-OCT) around 1.7 μm. A rate equation model for QD-SOAs was modified and applied to the results to understand the dynamics of the devices. The model showed a good match to the measurements in the 1.6 to 1.8 μm wavelength range by fitting only one of the carrier escape rates. An equivalent circuit model was used to determine the capacitances which dominated the electrical bandwidth.