J.P. van Engelen, L. Shen, G.C., Roelkens, Y. Jiao, M.K. Smit & J.J.G.M. van der Tol
Proceedings of the 21st Annual Symposium of the IEEE Photonics Society Benelux Chapter, 17-18 November 2016, Universiteit Gent, Ghent, Belgium.
Publication year: 2016

Abstract

Recently we proposed a novel membrane electro-absorption modulator (EAM) based on the bandfilling induced absorption change in n-InGaAs. We now present the optical design and give a detailed analysis on the extinction ratio (ER) and insertion loss (IL). An improved design is given that results in an ER of 7.9 dB/100μm and an IL of 2.2 dB/100μm. This allows a modulation speed of 15 GHz for a device with a given ER of 7 dB, which makes it suitable for datacom applications.

Leave a Reply

Your email address will not be published. Required fields are marked *