Recently we proposed a novel membrane electro-absorption modulator (EAM) based on the bandfilling induced absorption change in n-InGaAs. We now present the optical design and give a detailed analysis on the extinction ratio (ER) and insertion loss (IL). An improved design is given that results in an ER of 7.9 dB/100μm and an IL of 2.2 dB/100μm. This allows a modulation speed of 15 GHz for a device with a given ER of 7 dB, which makes it suitable for datacom applications.
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