Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP-membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these two active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.
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