J. P. van Engelen, V. Pogoretskiy, M. K. Smit, J. J. G. M. van der Tol and Y. Jiao
Proceedings of the 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, 27-28 November 2017, TU Delft, Delft, The Netherlands.
Publication year: 2017


Recently a uni-traveling-carrier photodetector with high speed (> 67GHz) and a high-gain optical amplifier (110/cm at 4 kA/cm2) have been demonstrated using the InP-membrane-on-Silicon (IMOS) integration technology. Passives in IMOS have shown features comparable to SOI platforms due to the tight optical confinement. In this paper a fully integrated membrane photonics platform on silicon is proposed that integrates these two active devices with thermally tunable passives and heatsinking capabilities to the silicon carrier.

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